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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes
6.8-100 pF, 30 Volts Voltage Variable Capacitance Diodes
These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid-state reliability in replacement of mechanical tuning methods. Also available in a Surface Mount Package up to 33 pF.
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3 Cathode
SOT-23
1 Anode
* * * *
High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance - 10% Complete Typical Design Curves
2 Cathode
TO-92
1 Anode
MARKING DIAGRAM
3
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25C MMBV21xx Derate above 25C @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range MV21xx LV22xx TJ Tstg Symbol VR IF PD 225 1.8 280 2.8 +150 -55 to +150 C C
1
Value 30 200
Unit Vdc mAdc mW mW/C
1 2
XXX M
TO-236AB, SOT-23 CASE 318-08 STYLE 8
XXX = Device Code* M = Date Code * See Table
XX XXXX YWW
DEVICE MARKING
MMBV2101LT1 = M4G MMBV2103LT1 = 4H MMBV2105LT1 = 4U MMBV2107LT1 = 4W MMBV2108LT1 = 4X MMBV2109LT1 = 4J MV2101 = MV2101 MV2105 = MV2105 MV2109 = MV2109 LV2205 = LV2205 LV2209 = LV2209
2
TO-226AC, TO-92 CASE 182 STYLE 1
XX = Device Code Line 1* XXXX = Device Code Line 2* M = Date Code * See Table
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 Adc) MMBV21xx, MV21xx LV22xx Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Symbol V(BR)R 30 25 IR - - - - - - 0.1 Adc Min Typ Max Unit Vdc
Preferred devices are recommended choices for future use and best overall value.
TCC
-
280
-
ppm/C
(c) Semiconductor Components Industries, LLC, 2001
1
October, 2001 - Rev. 3
Publication Order Number: MMBV2101LT1/D
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device MMBV2101LT1/MV2101 MMBV2103LT1 LV2205/MMBV2105LT1/MV2105 MMBV2107LT1 MMBV2108LT1 LV2209MMBV2109LT1/MV2109 Min 6.1 9.0 13.5 19.8 24.3 29.7 Nom 6.8 10 15 22 27 33 Max 7.5 11 16.5 24.2 29.7 36.3
Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz Typ 450 400 400 350 300 200 Min 2.5 2.5 2.5 2.5 2.5 2.5
TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.7 2.9 2.9 2.9 3.0 3.0 Max 3.2 3.2 3.2 3.2 3.2 3.2
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the "T1" suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent).
2. TR, TUNING RATIO
4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = -65C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85C in the following equation, which defines TCC:
TCC + CT() 85C) - CT(-65C) 106 * 85 ) 65 CT(25C)
TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations:
Q + 2pfC G
Accuracy limited by measurement of CT to 0.1 pF.
(Boonton Electronics Model 33AS8 or equivalent). Use Lead Length [ 1/16".
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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
TYPICAL DEVICE CHARACTERISTICS
1000 500 C T , DIODE CAPACITANCE (pF) 200 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 MMBV2109LT1/MV2109 MMBV2105LT1/MV2105 MMBV2101LT1/MV2101 TA = 25C f = 1.0 MHz
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
1.040 NORMALIZED DIODE CAPACITANCE I R , REVERSE CURRENT (nA) 1.030 1.020 1.010 1.000 0.990 0.980 0.970 0.960 -75 -50 NORMALIZED TO CT at TA = 25C VR = (CURVE) -25 0 +25 +50 +75 TJ, JUNCTION TEMPERATURE (C) +100 +125 VR = 4.0 Vdc VR = 30 Vdc VR = 2.0 Vdc 100 50 20 10 5.0 2.0 1.0 0.50 0.20 0.10 0.05 0.02 0.01 0 5.0 10 15 20 25 30 TA = 125C
TA = 75C
TA = 25C
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Normalized Diode Capacitance versus Junction Temperature
5000 3000 2000 Q, FIGURE OF MERIT 1000 500 300 200 100 50 30 20 10 1.0 2.0 10 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) TA = 25C f = 50 MHz 20 30 MMBV2101LT1/MV2101 MMBV2109LT1 Q, FIGURE OF MERIT 5000 3000 2000 1000 500 300 200 100 50 30 20 10 10
Figure 3. Reverse Current versus Reverse Bias Voltage
MMBV2101LT1/MV2101
TA = 25C VR = 4.0 Vdc 20
MMBV2109LT1/MV2109
100 30 50 70 f, FREQUENCY (MHz)
200
250
Figure 4. Figure of Merit versus Reverse Voltage
Figure 5. Figure of Merit versus Frequency
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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.037 0.95
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.
PD = 150C - 25C 556C/W = 225 milliwatts
The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
SOLDER STENCIL GUIDELINES Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration.
TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 7 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
STEP 1 PREHEAT ZONE 1 RAMP" 200C
STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP"
STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 170C 160C
STEP 6 STEP 7 VENT COOLING 205 TO 219C PEAK AT SOLDER JOINT
DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C
150C
100C 100C
140C
SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY)
50C
DESIRED CURVE FOR LOW MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 6. Typical Solder Heating Profile
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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
PACKAGE DIMENSIONS SOT-23 (TO-236AB) CASE 318-08 ISSUE AF
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A L
3 1 2
BS
V
G C D H K J
DIM A B C D G H J K L S V
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE
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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
PACKAGE DIMENSIONS TO-92 (TO-226AC) CASE 182-06 ISSUE L
A B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 --0.250 --0.080 0.105 --0.050 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 --6.35 --2.03 2.66 --1.27 2.93 --3.43 ---
SEATING PLANE
R D P K L
XX D G H V C N
SECTION X-X
STYLE 1: PIN 1. ANODE 2. CATHODE
1
2
N
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EE EE
J
DIM A B C D G H J K L N P R V
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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MMBV2101LT1/D

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